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 Spec. No.
: ODT-W010-82(0)
Issued Date : 2004.09.20
SPECIFICATION
MODEL NAME : Photo Diode MODEL NO. : OP58TS
Prepared by : Checked by : Approved by :
ODTech
Head office : 814, Youngam-ri, Bongdong-eup, Wanju-gun, Jeonbok-do, Korea Tel : 82-63-263-7626, Fax : 82-63-262-7624 Jeonju office : Tel : 82-63-214-2112, Fax : 82-63-214-2113 E-mail : kgbb@od-tech.com 1
Opto-Device Technology
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Photo Diode
Description
The OP58TS is a high speed, high output pin photo diode, mounted in a low-cost PCB package.
OP58TS
Features

High output power High-speed response Easy to mount on PCB Low dark current
Applications
Fiber optic communication Optical switches
Absolute Maximum Ratings
Parameter Reverse Breakdown Voltage Junction Temperature Operating Temperature Storage Temperature Symbol BVR TJ TOPR TSTG Ratings 30 150 -20 ~ 80 -30 ~ 90
(Ta= 25) Unit V (Ta=25)
Electro-Optical Characteristics
Parameter
Open Circuit Voltage Short Circuit Current ISC Dark Current Capacitance Temp. Coefficient of Voc Temp. Coefficient of Isc Spectrum Sensitivity Peak Sensing Wavelength Reverse Breakdown Voltage Half Angle
*1 *2
Symbol
Voc ISC
Conditions
Ev=1,000lux Ev=1,000lux Condition*2 VR=5V f=1MHz
*1 *1
Min
0.35 19 450
Typ
0.38 30.5 4
Max
100
Unit
V / %/ nm nm V Deg.
ID Ct
22 -2.2 0.18 940 70 60
1100
t t
p BVR Ir=10
30 -
-
: Parallel light of 1,000lux illumination is applied by a tungsten lamp of 2856K : Light source : Laser Diode (=780nm), IF=20, Distance = 30mm
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Photo Diode
Typical electrical / Optical characteristic curves (Ta=25)
0 I L - Light current []
100Lux
OP58TS
ISC - Short Current []
200Lux
10
300Lux 400Lux 500Lux
10
20
1000Lux
10
30
10 0
40 0 0.1 0.2 0.3 0.4 0.5 V F - Forward voltage [v]
10 -1 10
10
10
10
EV - Illuminance [Lux]
Fig.1 Light current vs. Forward voltage
R S - Relative Spectral Sensitivity [%]
Fig.2 Short Current vs. Illuminance
100 80 60 40 20 0 400 500 600 700 800 900 1000 1100 - Wavelength [nm]
ID - Dark Current [nA]
10 0
10 -1
10 -2
10 -3 -20
0
20
40
60
80
100
Ta - Ambient Temperature []
Fig.3 Dark current vs. Ambient temperature
Angle (deg.)
30 40 50 60 70 80 90 100 50 0 50 20 10 0 -10 -20 -30 -40 -50 -60 -70 -80 -90 100
Fig.4 Relative spectral sensitivity vs. Wavelength
Po - Relative radiant Intensity [%]
Fig.5 Radiant Pattern
Opto-Device Technology
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Photo Diode
OP58TS
Lot number
The first five digits number shows lot number. The lot number is composed of the following characters;
- Process number Day ( 01,02,...,29,30,31 ) Month ( 1,2,3....9,A,B,C ) Year ( 03,04,...10 )
Cleaning
When washing is required, isopropyl alcohol should be used. The influence of ultrasonic cleaning on the optical detectors differs depending on factors such as oscillator output and how the optical detectors are mounted. Before cleaning by ultrasonic wave, testing should be performed to ensure this will not cause damage to the optical detectors.
Storage
The optical detectors should be stored at 30 or less and 70%R.H or less after being shipped from ODTech and the storage life limits are 3 months. If the optical detectors are stored for 3 months or more, they can be stored for a year in a sealed container with a nitrogen atmosphere and moisture absorbent material. ODTech optical detectors leads are comprised of a gold plated iron alloy. The gold surface may be affected by environments which contain corrosive gases and so on. Please avoid conditions which may cause the device to corrode, tarnish or discolor. This corrosion or discoloration may cause difficulty during soldering operations. It is recommended that the optical devices be used as soon as possible. Please avoid rapid transitions in ambient temperature, especially, in high humidity environments where condensation can occur.
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Photo Diode
OP58TS
Outline Dimensions
(Unit : mm)
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Photo Diode
OP58TS
Outline Dimensions
(Unit : mm)
Opto-Device Technology
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